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SI8429DB-T1-E1
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 8V 11.7A 4MICROFOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-XFBGA, CSPBGA
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 5 V
Rds On (Max) @ Id, Vgs:
35mOhm @ 1A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
8 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1640 PF @ 4 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
4-Microfoot
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
11.7A (Tc)
Power Dissipation (Max):
2.77W (Ta), 6.25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8429
Model Number:
SI8429DB-T1-E1
Introduction
P-Channel 8 V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
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