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SIR178DP-T1-RE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 100A/430A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
310 NC @ 10 V
Rds On (Max) @ Id, Vgs:
0.4mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
+12V, -8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
12430 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
100A (Ta), 430A (Tc)
Power Dissipation (Max):
6.3W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR178
Model Number:
SIR178DP-T1-RE3
Introduction
N-Channel 20 V 100A (Ta), 430A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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