TK5R1P08QM,RQ
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3980 PF @ 40 V
Series:
U-MOSX-H
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 700µA
Supplier Device Package:
DPAK
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 42A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
104W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
84A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TK5R1P08QM,RQ
Introduction
N-Channel 80 V 84A (Tc) 104W (Tc) Surface Mount DPAK
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