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IRF6668TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 55A DIRECTFET MZ
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.9V @ 100µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric MZ
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Rds On (Max) @ Id, Vgs:
15mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1320 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
DIRECTFET™ MZ
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Power Dissipation (Max):
2.8W (Ta), 89W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF6668
Model Number:
IRF6668TRPBF
Introduction
N-Channel 80 V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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