english
ISZ0703NLSATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 13A/56A TSDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.3V @ 15µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
23 NC @ 10 V
Rds On (Max) @ Id, Vgs:
7.3mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1400 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Supplier Device Package:
PG-TSDSON-8-25
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 56A (Tc)
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISZ0703N
Model Number:
ISZ0703NLSATMA1
Introduction
N-Channel 60 V 13A (Ta), 56A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount PG-TSDSON-8-25
Send RFQ
Stock:
MOQ: