english
CSD19537Q3
manufacturer:
Texas Instruments
Description:
MOSFET N-CH 100V 9.7A/50A 8VSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1680 PF @ 50 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON (3.3x3.3)
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Power Dissipation (Max):
2.8W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19537
Model Number:
CSD19537Q3
Introduction
N-Channel 100 V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
Send RFQ
Stock:
MOQ: