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IRLU3110ZPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 42A IPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
14mOhm @ 38A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±16V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
3980 PF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
IPAK (TO-251AA)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Power Dissipation (Max):
140W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLU3110
Model Number:
IRLU3110ZPBF
Introduction
N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
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