english
IRF1010EPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 84A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
3210 PF @ 25 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
84A (Tc)
Power Dissipation (Max):
200W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF1010
Model Number:
IRF1010EPBF
Introduction
N-Channel 60 V 84A (Tc) 200W (Tc) Through Hole TO-220AB
Send RFQ
Stock:
MOQ: