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Home > Products > > UF3C120080B7S

UF3C120080B7S

manufacturer:
Qorvo
Description:
SICFET P-CH 1200V 28.8A D2PAK-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Vgs(th) (Max) @ Id:
6V @ 10mA
Series:
-
Vgs (Max):
±25V
Gate Charge (Qg) (Max) @ Vgs:
23 NC @ 12 V
Supplier Device Package:
D2PAK-7
Rds On (Max) @ Id, Vgs:
105mOhm @ 20A, 12V
Mfr:
Qorvo
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
754 PF @ 100 V
Drain To Source Voltage (Vdss):
1200 V
Power Dissipation (Max):
190W (Tc)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C:
28.8A (Tc)
Technology:
SiCFET (Cascode SiCJFET)
Base Product Number:
UF3C120080
Model Number:
UF3C120080B7S
Introduction
N-Channel 1200 V 28.8A (Tc) 190W (Tc) Surface Mount D2PAK-7
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