english
PSMN9R1-30YL,115
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 30V 57A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
16.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
894 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN9R1
Model Number:
PSMN9R1-30YL,115
Introduction
N-Channel 30 V 57A (Tc) 52W (Tc) Surface Mount LFPAK56, Power-SO8
Send RFQ
Stock:
MOQ: