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RQ3E180BNTB
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CHANNEL 30V 39A 8HSMT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
37 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3500 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSMT (3.2x3)
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Power Dissipation (Max):
2W (Ta), 20W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ3E180
Model Number:
RQ3E180BNTB
Introduction
N-Channel 30 V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
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