english
XPW4R10ANB,L1XHQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 100V 70A AEC-Q101
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
75 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
4970 PF @ 10 V
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Supplier Device Package:
8-DSOP Advance
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 35A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
-55°C ~ 175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
170W (Tc)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
70A
Technology:
MOSFET (Metal Oxide)
FET Feature:
Standard
Model Number:
XPW4R10ANB,L1XHQ
Introduction
N-Channel 100 V 70A 170W (Tc) Surface Mount 8-DSOP Advance
Send RFQ
Stock:
MOQ: