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R8001CND3FRATL
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 800V 1A TO252
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
7.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
60 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-252
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
1A (Tc)
Power Dissipation (Max):
36W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R8001
Model Number:
R8001CND3FRATL
Introduction
N-Channel 800 V 1A (Tc) 36W (Tc) Surface Mount TO-252
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