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IMZ120R350M1HXKSA1
manufacturer:
Infineon Technologies
Description:
SICFET N-CH 1.2KV 4.7A TO247-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.7V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
5.3 NC @ 18 V
Rds On (Max) @ Id, Vgs:
350mOhm @ 2A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+23V, -7V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
182 PF @ 800 V
Mounting Type:
Through Hole
Series:
CoolSiC™
Supplier Device Package:
PG-TO247-4-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMZ120
Model Number:
IMZ120R350M1HXKSA1
Introduction
N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
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