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SSM3J168F,LXHF
manufacturer:
Toshiba Semiconductor and Storage
Description:
SMOS LOW RON VDS:-60V VGSS:+10/-
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
3 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
82 PF @ 10 V
Series:
Automotive, AEC-Q101, U-MOSVI
Vgs (Max):
+10V, -20V
Vgs(th) (Max) @ Id:
2V @ 1mA
Supplier Device Package:
S-Mini
Rds On (Max) @ Id, Vgs:
1.55Ohm @ 200mA, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Power Dissipation (Max):
600mW (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SSM3J168F,LXHF
Introduction
P-Channel 60 V 400mA (Ta) 600mW (Ta) Surface Mount S-Mini
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