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TPN2R903PL,L1Q
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 30V 70A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 200µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2300 PF @ 15 V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Power Dissipation (Max):
630mW (Ta), 75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN2R903
Model Number:
TPN2R903PL,L1Q
Introduction
N-Channel 30 V 70A (Tc) 630mW (Ta), 75W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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