english
RF4C100BCTCR
manufacturer:
Rohm Semiconductor
Description:
MOSFET P-CH 20V 10A HUML2020L8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerUDFN
Gate Charge (Qg) (Max) @ Vgs:
23.5 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
15.6mOhm @ 10A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1660 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
HUML2020L8
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RF4C100
Model Number:
RF4C100BCTCR
Introduction
P-Channel 20 V 10A (Ta) 2W (Ta) Surface Mount HUML2020L8
Send RFQ
Stock:
MOQ: