IXTH220N20X4
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
157 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 110A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
12300 PF @ 25 V
Mounting Type:
Through Hole
Series:
Ultra X4
Supplier Device Package:
ISO TO-247-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
220A (Tc)
Power Dissipation (Max):
800W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH220
Model Number:
IXTH220N20X4
Introduction
N-Channel 200 V 220A (Tc) 800W (Tc) Through Hole ISO TO-247-3
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