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GAN063-650WSAQ
manufacturer:
Nexperia USA Inc.
Description:
GANFET N-CH 650V 34.5A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
15 NC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 400 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247-3
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
34.5A (Ta)
Power Dissipation (Max):
143W (Ta)
Technology:
GaNFET (Cascode Gallium Nitride FET)
Base Product Number:
GAN063
Model Number:
GAN063-650WSAQ
Introduction
N-Channel 650 V 34.5A (Ta) 143W (Ta) Through Hole TO-247-3
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