RQ7E055ATTCR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
18.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
24.5mOhm @ 5.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
860 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT8
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Power Dissipation (Max):
1.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ7E055
Model Number:
RQ7E055ATTCR
Introduction
P-Channel 30 V 5.5A (Tc) 1.5W (Tc) Surface Mount TSMT8
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