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XPN6R706NC,L1XHQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 40A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 300µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2000 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance-WF (3.1x3.1)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Power Dissipation (Max):
840mW (Ta), 100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPN6R706
Model Number:
XPN6R706NC,L1XHQ
Introduction
N-Channel 60 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
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