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SQ4153EY-T1_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CHANNEL 12V 25A 8SOIC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
151 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
8.32mOhm @ 14A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
11000 PF @ 6 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Power Dissipation (Max):
7.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ4153
Model Number:
SQ4153EY-T1_GE3
Introduction
P-Channel 12 V 25A (Tc) 7.1W (Tc) Surface Mount 8-SOIC
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