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XPH2R106NC,L1XHQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 110A 8SOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Series:
Automotive, AEC-Q101, U-MOSVIII-H
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
104 NC @ 10 V
Supplier Device Package:
8-SOP Advance (5x5)
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 55A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
175°C
Input Capacitance (Ciss) (Max) @ Vds:
6900 PF @ 10 V
Drain To Source Voltage (Vdss):
60 V
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Package / Case:
8-SOIC (0.197", 5.00mm Width)
Current - Continuous Drain (Id) @ 25°C:
110A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPH2R106
Model Number:
XPH2R106NC,L1XHQ
Introduction
N-Channel 60 V 110A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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