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XPH4R10ANB,L1XHQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 100V 70A 8SOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
175°C
Package / Case:
8-SOIC (0.197", 5.00mm Width)
Gate Charge (Qg) (Max) @ Vgs:
75 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4970 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPH4R10
Model Number:
XPH4R10ANB,L1XHQ
Introduction
N-Channel 100 V 70A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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