TPWR7904PB,L1XHQ
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
85 NC @ 10 V
Rds On (Max) @ Id, Vgs:
0.79mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6650 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-DSOP Advance
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
150A (Ta)
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPWR7904
Model Number:
TPWR7904PB,L1XHQ
Introduction
N-Channel 40 V 150A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Send RFQ
Stock:
MOQ:

