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SI1078X-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 1.02A SOT563F
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
3 NC @ 4.5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
110 PF @ 15 V
Series:
TrenchFET®
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Mfr:
Vishay Siliconix
Rds On (Max) @ Id, Vgs:
142mOhm @ 1A, 10V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Power Dissipation (Max):
240mW (Tc)
Package / Case:
SOT-563, SOT-666
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1.02A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1078
Model Number:
SI1078X-T1-GE3
Introduction
N-Channel 30 V 1.02A (Tc) 240mW (Tc) Surface Mount
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