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IXTP52P10P
manufacturer:
IXYS
Description:
MOSFET P-CH 100V 52A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
60 NC @ 10 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 52A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2845 PF @ 25 V
Mounting Type:
Through Hole
Series:
PolarP™
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTP52
Model Number:
IXTP52P10P
Introduction
P-Channel 100 V 52A (Tc) 300W (Tc) Through Hole TO-220-3
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