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C3M0120065D
manufacturer:
Wolfspeed, Inc.
Description:
650V 120M SIC MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
28 NC @ 15 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
640 PF @ 400 V
Series:
C3M™
Vgs (Max):
+19V, -8V
Vgs(th) (Max) @ Id:
3.6V @ 1.86mA
Supplier Device Package:
TO-247-3
Rds On (Max) @ Id, Vgs:
157mOhm @ 6.76A, 15V
Mfr:
Wolfspeed, Inc.
Operating Temperature:
-40°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Power Dissipation (Max):
98W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
C3M0120065D
Introduction
N-Channel 650 V 22A (Tc) 98W (Tc) Through Hole TO-247-3
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