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TK190U65Z,RQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
DTMOS VI TOLL PD=130W F=1MHZ
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1370 PF @ 300 V
Series:
DTMOSVI
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 610µA
Supplier Device Package:
TOLL
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.5A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
130W (Tc)
Package / Case:
8-PowerSFN
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TK190U65Z,RQ
Introduction
N-Channel 650 V 15A (Ta) 130W (Tc) Surface Mount TOLL
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