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IXFX27N80Q
manufacturer:
IXYS
Description:
MOSFET N-CH 800V 27A PLUS247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
170 NC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7600 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q Class
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Power Dissipation (Max):
500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX27
Model Number:
IXFX27N80Q
Introduction
N-Channel 800 V 27A (Tc) 500W (Tc) Through Hole PLUS247™-3
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