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XPN12006NC,L1XHQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 20A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
23 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1100 PF @ 10 V
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 200µA
Supplier Device Package:
8-TSON Advance-WF (3.1x3.1)
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
-55°C ~ 175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
65W (Tc)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
20A
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPN12006
Model Number:
XPN12006NC,L1XHQ
Introduction
N-Channel 60 V 20A 65W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
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