TPH4R50ANH1,LQ
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
58 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
5200 PF @ 50 V
Series:
U-MOSVIII-H
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
8-SOP Advance (5x5.75)
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 46A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
800mW (Ta)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
92A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TPH4R50ANH1,LQ
Introduction
N-Channel 100 V 92A (Tc) 800mW (Ta) Surface Mount 8-SOP Advance (5x5.75)
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