NTPF360N65S3H
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17.5 NC @ 10 V
Product Status:
Not For New Designs
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
916 PF @ 400 V
Series:
SuperFET® III
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 700µA
Supplier Device Package:
TO-220FP
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
26W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tj)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NTPF360N65S3H
Introduction
N-Channel 650 V 10A (Tj) 26W (Tc) Through Hole TO-220FP
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