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PSMN4R5-80YSFX
manufacturer:
Nexperia USA Inc.
Description:
NEXTPOWER 80/100V MOSFETS
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
90 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6009 PF @ 40 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Power Dissipation (Max):
238W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN4R5
Model Number:
PSMN4R5-80YSFX
Introduction
N-Channel 80 V 100A (Ta) 238W (Ta) Surface Mount LFPAK56, Power-SO8
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