RS6P100BHTB1
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2880 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
8-HSOP
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 90A, 10V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
104W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RS6P100BHTB1
Introduction
N-Channel 100 V 100A (Tc) 104W (Tc) Surface Mount 8-HSOP
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