english
SQW61N65EF-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 62A TO247AD
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
Automotive, AEC-Q101, E
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
344 NC @ 10 V
Supplier Device Package:
TO-247AD
Rds On (Max) @ Id, Vgs:
52mOhm @ 32A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
7379 PF @ 100 V
Drain To Source Voltage (Vdss):
650 V
Power Dissipation (Max):
625W (Tc)
Package / Case:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQW61
Model Number:
SQW61N65EF-GE3
Introduction
N-Channel 650 V 62A (Tc) 625W (Tc) Through Hole TO-247AD
Send RFQ
Stock:
MOQ: