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NTH4L060N090SC1
manufacturer:
onsemi
Description:
SILICON CARBIDE MOSFET, NCHANNEL
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
87 NC @ 15 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1770 PF @ 450 V
Series:
-
Vgs (Max):
+22V, -8V
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Supplier Device Package:
TO-247-4L
Rds On (Max) @ Id, Vgs:
43mOhm @ 20A, 18V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Power Dissipation (Max):
221W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
NTH4L060N090SC1
Introduction
N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
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