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IPW65R029CFD7XKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 69A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4.5V @ 1.79mA
Series:
CoolMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
145 NC @ 10 V
Supplier Device Package:
PG-TO247-3
Rds On (Max) @ Id, Vgs:
29mOhm @ 35.8A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
7149 PF @ 400 V
Drain To Source Voltage (Vdss):
650 V
Power Dissipation (Max):
305W (Tc)
Package / Case:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPW65R029
Model Number:
IPW65R029CFD7XKSA1
Introduction
N-Channel 650 V 69A (Tc) 305W (Tc) Through Hole PG-TO247-3
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