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SSM6J825R,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
P-CH MOSFET -30V, -20/+10V, -4A
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
150°C
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
6.2 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
45mOhm @ 4A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+10V, -20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
492 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP-F
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
1.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6J825
Model Number:
SSM6J825R,LF
Introduction
P-Channel 30 V 4A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F
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