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SSM6K819R,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
N-CH MOSFET, 100 V, 10 A, 0.0258
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Operating Temperature:
175°C
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
8.5 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
25.8mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1110 PF @ 15 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
6-TSOP-F
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
1.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6K819
Model Number:
SSM6K819R,LF
Introduction
N-Channel 100 V 10A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F
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