english
SISA10BDN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 30-V (D-S) MOSFET POWE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
36.2 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1710 PF @ 15 V
Series:
TrenchFET® Gen IV
Vgs (Max):
+20V, -16V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 10A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.8W (Ta), 63W (Tc)
Package / Case:
PowerPAK® 1212-8
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 104A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SISA10BDN-T1-GE3
Introduction
N-Channel 30 V 26A (Ta), 104A (Tc) 3.8W (Ta), 63W (Tc) Surface Mount PowerPAK® 1212-8
Send RFQ
Stock:
MOQ: