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NP23N06YDG-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET N-CH 60V 23A 8HSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
8-SMD, Flat Lead Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 10 V
Rds On (Max) @ Id, Vgs:
27mOhm @ 11.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1800 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSON
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Power Dissipation (Max):
1W (Ta), 60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NP23N06
Model Number:
NP23N06YDG-E1-AY
Introduction
N-Channel 60 V 23A (Tc) 1W (Ta), 60W (Tc) Surface Mount 8-HSON
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