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UPA2826T1S-E2-AT
manufacturer:
Renesas Electronics America Inc
Description:
8P HWSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
37 NC @ 4 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3610 PF @ 10 V
Series:
-
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Supplier Device Package:
8-HWSON (3.3x3.3)
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 13.5A, 8V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 8V
Power Dissipation (Max):
20W (Ta)
Package / Case:
8-PowerWDFN
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
27A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
UPA2826T1S-E2-AT
Introduction
N-Channel 20 V 27A (Ta) 20W (Ta) Surface Mount 8-HWSON (3.3x3.3)
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