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RH6P040BHTB1
manufacturer:
Rohm Semiconductor
Description:
NCH 100V 40A, HSMT8, POWER MOSFE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
16.7 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1080 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
8-HSMT (3.2x3)
Rds On (Max) @ Id, Vgs:
15.6mOhm @ 40A, 10V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
59W (Tc)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RH6P040BHTB1
Introduction
N-Channel 100 V 40A (Tc) 59W (Tc) Surface Mount 8-HSMT (3.2x3)
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