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PJP45N06A_T0_00001
manufacturer:
Panjit International Inc.
Description:
60V N-CHANNEL ENHANCEMENT MODE M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
39 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
2256 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Power Dissipation (Max):
96W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJP45
Model Number:
PJP45N06A_T0_00001
Introduction
N-Channel 60 V 55A (Tc) 96W (Tc) Through Hole TO-220AB
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