2SJ655
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 10 V
Supplier Device Package:
TO-220ML
Rds On (Max) @ Id, Vgs:
136mOhm @ 6A, 10V
Mfr:
Onsemi
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2090 PF @ 20 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
2W (Ta), 25W (Tc)
Package / Case:
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
2SJ655
Introduction
P-Channel 100 V 12A (Ta) 2W (Ta), 25W (Tc) Through Hole TO-220ML
Send RFQ
Stock:
MOQ:

