TSM056NH04CV RGG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1828 PF @ 25 V
Series:
PerFET™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.6V @ 250µA
Supplier Device Package:
8-PDFN (3.1x3.1)
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 27A, 10V
Mfr:
Taiwan Semiconductor Corporation
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Power Dissipation (Max):
34W (Tc)
Package / Case:
8-PowerWDFN
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 54A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TSM056NH04CV RGG
Introduction
N-Channel 40 V 16A (Ta), 54A (Tc) 34W (Tc) Surface Mount 8-PDFN (3.1x3.1)
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