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R6530KNZ4C13
manufacturer:
Rohm Semiconductor
Description:
650V 30A TO-247, HIGH-SPEED SWIT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 960µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 14.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2350 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247G
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
305W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6530
Model Number:
R6530KNZ4C13
Introduction
N-Channel 650 V 30A (Tc) 305W (Tc) Through Hole TO-247G
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