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NTH4L075N065SC1
manufacturer:
onsemi
Description:
SILICON CARBIDE (SIC) MOSFET - 5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
61 NC @ 18 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 15A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1196 PF @ 325 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Power Dissipation (Max):
148W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTH4L075
Model Number:
NTH4L075N065SC1
Introduction
N-Channel 650 V 38A (Tc) 148W (Tc) Through Hole TO-247-4L
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