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C2M0160120D
manufacturer:
Wolfspeed, Inc.
Description:
SICFET N-CH 1200V 19A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
32.6 NC @ 20 V
Rds On (Max) @ Id, Vgs:
196mOhm @ 10A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
527 PF @ 800 V
Mounting Type:
Through Hole
Series:
Z-FET™
Supplier Device Package:
TO-247-3
Mfr:
Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
C2M0160120
Model Number:
C2M0160120D
Introduction
N-Channel 1200 V 19A (Tc) 125W (Tc) Through Hole TO-247-3
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